Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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HVPE growth of GaN/InGaN heterostructure on r-plane sapphire substrate

R-plane 사파이어 기판위의 GaN/InGaN 이종접합구조의 HVPE 성장

  • Jeon, H.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Hwang, S.L. (Department of Applied Sciences, Korea Maritime University) ;
  • Kim, K.H. (Department of Applied Sciences, Korea Maritime University) ;
  • Jang, K.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Lee, C.H. (Department of Applied Sciences, Korea Maritime University) ;
  • Yang, M. (Department of Applied Sciences, Korea Maritime University) ;
  • Ahn, H.S. (Department of Applied Sciences, Korea Maritime University) ;
  • Kim, S.W. (Department of Physics, Andong National University) ;
  • Jang, S.H. (Samsung Electro-Mechanics Co., Ltd.) ;
  • Lee, S.M. (Samsung Electro-Mechanics Co., Ltd.) ;
  • Park, G.H. (Samsung Electro-Mechanics Co., Ltd.) ;
  • Koike, M. (Samsung Electro-Mechanics Co., Ltd.)
  • 전헌수 (한국해양대학교 반도체물리학과) ;
  • 황선령 (한국해양대학교 반도체물리학과) ;
  • 김경화 (한국해양대학교 반도체물리학과) ;
  • 장근숙 (한국해양대학교 반도체물리학과) ;
  • 이충현 (한국해양대학교 반도체물리학과) ;
  • 양민 (국해양대학교 반도체물리학과) ;
  • 안형수 (한국해양대학교 반도체물리학과) ;
  • 김석환 (안동대학교 물리학과) ;
  • 장성환 (삼성전기) ;
  • 이수민 (삼성전기) ;
  • 박길한 (삼성전기) ;
  • Published : 2007.02.28
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Abstract

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

R-plane 사파이어 위에 a-plane GaN층이 성장된 기판에 혼합소스 HVPE(mixed-source hydride vapor phase epitaxy) 방법으로 GaN/InGaN의 이종접합구조(heterostructure)를 구현하였다. GaN/InGaN 이종접합구조는 GaN, InGaN, Mg-doped GaN 층으로 구성되어 있다. 각 층의 성장온도는 GaN층은 $820^{\circ}C$, InGaN 층은 $850^{\circ}C$, Mg-doped GaN 층은 $1050^{\circ}C$에서 성장하였다. 이때의 $NH_3$와 HCl 가스의 유량은 각각 500 sccm, 10 sccm 이었다. SAG-GaN/InGaN 이종접합구조의 상온 EL (electroluminescence) 특성은 중심파장은 462 nm, 반치폭(FWHM : full width at half maximum) 은 0.67eV 이었다. 이 결과로부터 r-plane 사파이어 기판위에 multi-sliding boat system의 혼합소스 HVPE 방법으로 이종접합구조의 성장이 가능함을 확인하였다.

Keywords

References

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