Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

Refractive index control of F-doped SiOC : H thin films by addition fluorine

Fluorine 첨가에 의한 F-doped SiOC : H 박막의 저 굴절률 특성

  • Yoon, S.G. (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kang, S.M. (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Jung, W.S. (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Park, W.J. (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Yoon, D.H. (Department of Advanced Materials Engineering, Sungkyunkwan University)
  • 윤석규 (성균관대학교 신소재공학과) ;
  • 강삼묵 (성균관대학교 신소재공학과) ;
  • 정원석 (성균관대학교 신소재공학과) ;
  • 박우정 (성균관대학교 신소재공학과) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2007.04.30
Download PDF
⟨ Previous Next ⟩

Abstract

F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios ($SiH_4,\;CF_4$ and $N_2O$). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As $N_2O$ gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and $100^{\circ}C$ without $N_2O$ gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60 W to 180 W, which results in the decrease of refractive index.

저굴절 재료인 F-doped SiOC : H 박막을 Si 웨이퍼와 유리기판위에 rf power, 기판온도, 그리고 가스유량($SiH_4,\;CF_4$ and $N_2O$)을 변수로 하여 PECVD법으로 증착하였다. 기판 온도와 rf power증가에 따라 F-doped SiOC : H 박막의 굴절률은 감소하는 경향을 보였다. $N_2O$ 가스 유량이 감소함에 따라 증착된 박막의 굴절률은 감소하였으며, rf power가 180W 기판온도 $100^{\circ}C$, 그리고 $N_2O$ 가스를 첨가하지 않은 조건에서 증착한 박막은 최소 굴절률인 1.3778을 갖는 것을 알 수 있었다. Rf power 60W에서 180W로 증가시킴에 따라 증착된 박막의 불소 함량은 1.9at%에서 2.4at%로 증가하였으며 이러한 이유로 박막의 굴절률은 감소하는 경향을 나타냈다.

Keywords

References

  1. S.H. Jangjian, C.P. Liu, YL. Wang, W.S. Hwang and W.E. Tseng, 'Thermal stability and bonding configuration of fluorine-modified Iow-k SiOC: H composite films', Thin Solid Films 469 (2004) 460 https://doi.org/10.1016/j.tsf.2004.06.192
  2. S.G. Yoon, YT. Kim, H. Kim, MJ. Kim, H.M. Lee and S.H. Yoon 'Change of refractive index and residual stress of $Ta_2O_5$ thin film prepared by dual ion beam sputtering deposition as the substrate temperature and assist ion beam energy', J. Korean Ceramic Society 42(1) (2005) 28 https://doi.org/10.4191/KCERS.2005.42.1.028
  3. K.H. Guenther 'Physical and chemical aspects in the application of thin films on optical elements', Appl. Opt. 23-7 (1984) 3612 https://doi.org/10.1038/023023a0
  4. H. Angus Macleod, Thin Film Optical Filters third edition (Institute of Physics Publishing, (2001) ch.3, p.87
  5. D. Ochs and B. Cord 'In situ oxygen plasma cleaning of a PECVD source for hard disk overcoats', Applied Physics A: Materials Science & Processing 78 (2004) 637 https://doi.org/10.1007/s00339-003-2271-9
  6. S. Ali, M. Gharghi, S. Sivoththaman and K. Zeaiter 'Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation', Journal of Materials Science 40 (2005) 1469 https://doi.org/10.1007/s10853-005-0585-z
  7. C.S. Yang, et aI., 'The effect of the $CH_4$ plasma treatment on deposited SiOC(-H) films with low dielectric constant prepared by using $TMS/O_2$ PECVD', Thin Solid Films 475 (2005) 150 https://doi.org/10.1016/j.tsf.2004.07.019
  8. YH. Kim, S.K. Lee and H.I. Kim 'Low-k Si-O-C-H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor', J. Vac. Sci. Technol., A. Vac. Surf. Films 18 (2000) 1216 https://doi.org/10.1116/1.582328
  9. S.M. Yun, H.Y Chang, M.S. Kang and C.K. Choi, 'Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor', Thin solid Films 341 (1999) 109 https://doi.org/10.1016/S0257-8972(98)00781-6
  10. H.I. Kim, Q. Shao and Y.H. Kim, 'Characterization of low-dielectric-constant SiOC thin films deposited by PECVD for interlayer dielectrics of multilevel interconnection', Surface and Coatings Technology 171 (2001) 39 https://doi.org/10.1016/S0257-8972(03)00233-0
  11. Y.T. Kim, S.G. Yoon and D.H. Yoon, 'Low index contrast planar SiON waveguide deposited by PECVD', J. Korean Ceramic Society 42(3) (2005) 178 https://doi.org/10.4191/KCERS.2005.42.3.178