The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Structural, Optical and Electrical Properties of AI Doped ZnO Thin Films Prepared by Nd:YAG-PLD Technology

Nd:YAG-PLD법에 의해 제작된 ZnO:AI 박막의 구조적, 광학적, 전기적 특성

  • 노임준 (인하대학교 전기공학과) ;
  • 임재성 (인하대학교 전기공학과) ;
  • 이천 (인하대학교 전자전기공학부) ;
  • 신백균 (인하대학교 전자전기공학부)
  • Published : 2007.09.01
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Abstract

Aluminum doped zinc oxide (AZO) thin films were deposited on coming glass substrates using an Nd:YAG pulsed laser deposition technology. The AZO thin films were deposited with various growth conditions such as the substrate temperature and oxygen partial pressure. In this work, we used various measurement technologies in order to investigate the electrical, structural, and optical properties of the AZO thin films. Among the AZO thin films, the one prepared at the substrate temperature of $300^{\circ}C$ and oxygen partial pressure of 5 mTorr showed the best properties of an electrical resistivity of $4.63{\times}10^{-4}{\Omega}{\cdot}cm$, a carrier concentration of $9.25{\times}10^{20}cm^{-3}$, and a carrier mobility of $31.33cm^2/V{\cdot}s$. All the AZO thin films showed an high average optical transmittance over 90 % in visible region.

Keywords

References

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