The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Research of FN Stress Property Degradation According to S-RCAT Structure

S-RCAT (Spherical Recess Cell Allay Transistor) 구조에 따른 FN Stress 특성 열화에 관한 연구

  • 이동인 (삼선전자 메모리 사업부) ;
  • 이성영 (성균관대 전기전자컴퓨터공학과) ;
  • 노용한 (삼선전자 메모리 사업부)
  • Published : 2007.09.01
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Abstract

We have demonstrated the experimental results to obtain the immunity of FN (Fowler Nordheim) stress for S-RCAT (Spherical-Recess Cell Array Transistor) which has been employed to meet the requirements of data retention time and propagation delay time for sub-100-nm mobile DRAM (Dynamic Random Access Memory). Despite of the same S-RCAT structure, the immunity of FN stress of S-RCAT depends on the process condition of gate oxidation. The S-RCAT using DPN (decoupled plasma nitridation) process showed the different degradation of device properties after FN stress. This paper gives the mechanism of FN-stress degradation of S-RCAT and introduces the improved process to suppress the FN-stress degradation of mobile DRAM.

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References

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