Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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The Microstructure and Ferroelectric Properties of Ce-Doped Bi4Ti3O12 Thin Films Fabricated by Liquid Delivery MOCVD

  • Park, Won-Tae (Department of Materials Science and Engineering, Korea University) ;
  • Kang, Dong-Kyun (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Byong-Ho (Department of Materials Science and Engineering, Korea University)
  • Published : 2007.08.31
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Abstract

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

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References

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