Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Effect of Boron Carbide on the Morphology of SiC Conversion Layer of Graphite Substrate formed by Chemical Vapor Reaction

화학기상반응으로 흑연 위에 만든 SiC 반응층의 모양에 미치는 보론 카바이드의 영향

  • Hong, Hyun-Jung (Nano Materials Team, KICET(Korea Institute of Ceramic Engineering and Technology)) ;
  • Riu, Doh-Hyung (Nano Materials Team, KICET(Korea Institute of Ceramic Engineering and Technology)) ;
  • Cho, Kwang-Youn (Nano Materials Team, KICET(Korea Institute of Ceramic Engineering and Technology)) ;
  • Kong, Eun-Bae (Nano Materials Team, KICET(Korea Institute of Ceramic Engineering and Technology)) ;
  • Shin, Dong-Geun (Nano Materials Team, KICET(Korea Institute of Ceramic Engineering and Technology)) ;
  • Shin, Dae-Kyu (Hynix Semiconductor) ;
  • Lee, Jae-Sung (Department of Metallurgy and Materials Engineering, Hanyang University)
  • Published : 2007.08.31
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Abstract

A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{\circ}C\;and\;1700^{\circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system.

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References

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