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1.31 um Uncooled DFB-LD with High Slope Efficiency for G-PON Application

G-PON용 높은 전광변환효율을 갖는 1.31 um 비냉각 DFB-LD

  • Kim, Jeong-Ho (Telecommunication Technology group R&D Center, LS Cable Ltd.) ;
  • Pi, Joong-Ho (Telecommunication Technology group R&D Center, LS Cable Ltd.) ;
  • Kim, Deok-Hyun (Telecommunication Technology group R&D Center, LS Cable Ltd.) ;
  • Park, Chil-Sung (Telecommunication Technology group R&D Center, LS Cable Ltd.) ;
  • Ryu, Han-Gwon (Telecommunication Technology group R&D Center, LS Cable Ltd.) ;
  • Koo, Bon-Jo (Telecommunication Technology group R&D Center, LS Cable Ltd.)
  • 김정호 (LS전선(주) 중앙연구소 광기술그룹) ;
  • 피중호 (LS전선(주) 중앙연구소 광기술그룹) ;
  • 김덕현 (LS전선(주) 중앙연구소 광기술그룹) ;
  • 박칠성 (LS전선(주) 중앙연구소 광기술그룹) ;
  • 류한권 (LS전선(주) 중앙연구소 광기술그룹) ;
  • 구본조 (LS전선(주) 중앙연구소 광기술그룹)
  • Published : 2007.10.25

Abstract

A Strained Layer Multiquantum-Well (SL-MQW) distributed feedback laser at a wavelength of 1.31 um operating from $-40^{\circ}C$ to $85^{\circ}C$ without any cooling is grown by metal-organic chemical vapor deposition (MOCVD). Lasers with high slope efficiency are achieved through careful optimization of a SL-MQW active layer, especiallyoptimizing the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. In this paper, we obtain the slope efficiencies of 0.38[mW/mA] and 0.26 [mW/mA] at $25^{\circ}C$ and $85^{\circ}C$, respectively. Threshold currents are 7.1[mA] and 19.8[mA] at $25^{\circ}C$ and $85^{\circ}C$, respectively.

[ $-40^{\circ}C$ ]에서 $85^{\circ}C$의 온도에서 냉각장치 없이 동작하는 1.31 um 비냉각 DFB-LD가 유기 금속 화학 증착법에 의해 성장되었다. 높은 전광변환효율을 갖는 레이저의 제작은 스트레인이 인가된 다중양자우물 구조의 최적화를 통해 가능하며, 특히 스트레인의 양, 양자 우물의 두께, 전위장벽의 두께, 양자 우물의 수, 활성층의 폭에 주로 영향을 받는다. 본 연구에서 제작된 DFB-LD는 $25^{\circ}C$$85^{\circ}C$에서 전광변환효율은 0.38[mW/mA]와 0.26[mW/mA], 발진개시전류는 각각 7.1[mA]와 19.8[mA]의 값을 가졌다.

Keywords

References

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