Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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High Performance Wilkinson Power Divider Using Integrated Passive Technology on SI-GaAs Substrate

  • Wang, Cong (Department of Electronic Engineering, Kwangwoon University) ;
  • Qian, Cheng (Department of Electronic Engineering, Kwangwoon University) ;
  • Li, De-Zhong (Department of Electronic Engineering, Kwangwoon University) ;
  • Huang, Wen-Cheng (Department of Electronic Engineering, Kwangwoon University) ;
  • Kim, Nam-Young (Department of Electronic Engineering, Kwangwoon University)
  • Published : 2008.09.30
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Abstract

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

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References

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