Optical and Thermal Influence Analysis of High-power LED by MCPCB temperature

MCPCB의 온도에 따른 고출력 LED의 광학적, 열적 영향력 분석

  • 이승민 (원광대 전자재료공학과) ;
  • 양종경 (원광대 전자재료공학과) ;
  • 조주웅 (원광대 전자재료공학과) ;
  • 이종찬 (금호전기(주) 부설연구소) ;
  • 박대희 (원광대학교 전기전자및정보공학부)
  • Published : 2008.12.01

Abstract

In this paper, we present thermal dependancy of LED package element by changing temperature of MCPCB for design high efficiency LED lamp, and confirmed influence of LED chip against temperature with analysis of thermal resistance and thermal capacitance. As increasing temperature, WPOs were decreased from 25 to 22.5 [%] and optical power were also decreased. that is decreased reason of optical power that forward voltage was declined by decrease of energy bandgap. Therefore optical power by temperature of MCPCB should consider to design lamp for street light and security light. Moreover, compensation from declined optical efficiency is demanded when LED package is composed. Also, thermal resistances from chip to metal PCB were decreased from 12.18 to 10.8[$^{\circ}C/W$] by changing temperature. Among the thermal resistances, the thermal resistance form chip to die attachment was decreased from 2.87 to 2.5[$^{\circ}C/W$] and was decreased 0.72[$^{\circ}C/W$] in Heat Slug by chaning temperature. Therefore, because of thermal resistance gap in chip and heat slug, reliability and endurance of high power LED affect by increasing non-radiative recombination in chip from heat.

Keywords

References

  1. N. Holonyak Jr. and S. F. Bevaqua, Appl. Phys. Lett., Vol.1 p82 (1962) https://doi.org/10.1063/1.1753706
  2. Jianzheng Hu, Lianqiao Yang, and Moo Whan Shin "Thermal and Mechanical Analysis of High-Power LEDs With Ceramic Packages", IEEE TRANSACTIONS ON DEVICE AND MATERlALS RELIABILITY, VOL. 8, NO. 2 (2008)
  3. Takashi Mukai, Daisuke Morita, Shuji Nakamura, Journalof Crystal Growth, Vol. 189/190, p778 (1998) https://doi.org/10.1016/S0022-0248(98)00292-9
  4. Nadarajah Narendran, Lei Deng, Proceedings IESNA Annual Conference: Performance Charateristcs of Light Emitting Diodes (2002)
  5. Jianzheng Hu, Lianqiao Yang and Moo Whan Shin, "Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes", J. Phys. D: Appl. Phys. 41 (2008)
  6. Jeong Park, Moowhan Shin, Chin C. Lee, OPTICS LETTERS, Vol. 29, No. 22, p2656 (2004) https://doi.org/10.1364/OL.29.002656
  7. Jianzheng Hu, Lianqiao Yang and Moo Whan Shin, "Thermal and Mechanical Analysis of High-Power LEDs With Ceramic Packages", IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 8, NO.2, JUNE (2008)
  8. T. Margalith, M. O. Holcomb, S. Boles, and D. A. Steigerwald, Proc. SPIE 6134 (2006)
  9. H. Pape et al.: Thermal transient modeling and experimental validation in the European project PROFIT, IEEE Tr. on Component and Packaging Technologies, Vol.27, No.3, pp, 530-538 (2004) https://doi.org/10.1109/TCAPT.2004.831791
  10. Varshni Y.P., "Temperature dependence of the energy gap in semiconductors", Physica, Vol 34, p149 (1967) https://doi.org/10.1016/0031-8914(67)90062-6