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Effect of Contact Conductance and Semitransparent Radiation on Heat Transfer During CVD Process of Semiconductor Wafer

접촉전도와 반투명 복사가 반도체 웨이퍼의 CVD 공정 중 열전달에 미치는 영향

  • 윤용석 (동국대학교 대학원 기계공학과) ;
  • 홍혜정 (동국대학교 대학원 기계공학과) ;
  • 송명호 (동국대학교 기계공학과)
  • Published : 2008.02.05

Abstract

During CVD process of semiconductor wafer fabrication, maintaining the uniformity of temperature distribution at wafer top surface is one of the key factors affecting the quality of final products. Effect of contact conductance between wafer and hot plate on predicted temperature of wafer was investigated. The validity of opaque wafer assumption was also examined by comparing the predicted results with Discrete Ordinate solutions accounting for semitransparent radiative characteristics of silicon. As the contact conductance increases predicted wafer temperature increases and the differences between maximum and minimum temperatures within wafer and between wafer and hot plate top surface temperatures decrease. The opaque assumption always overpredicted the wafer temperature compared to semitransparent calculation. The influences of surrounding reactor inner wall temperature and hot plate configuration are then discussed.

Keywords

References

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