Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effect of Thermal Aging on Intermetallic Compound Growth Kinetics of Au Stud Bump

Au stud 범프의 금속간화합물 성장거동에 미치는 시효처리의 영향

  • Lim, Gi-Tae (School of Materials Science and Engineering, Andong National University) ;
  • Lee, Jang-Hee (School of Materials Science and Engineering, Andong National University) ;
  • Kim, Byoung-Joon (School of Materials Science and Engineering, Seoul National University) ;
  • Lee, Ki-Wook (R&D Center Amkor Technology Korea Inc.) ;
  • Lee, Min-Jae (R&D Center Amkor Technology Korea Inc.) ;
  • Joo, Young-Chang (School of Materials Science and Engineering, Seoul National University) ;
  • Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
  • 임기태 (안동대학교 신소재공학부) ;
  • 이장희 (안동대학교 신소재공학부) ;
  • 김병준 (서울대학교 재료공학부) ;
  • 이기욱 (앰코테크놀로지코리아 기술연구소) ;
  • 이민재 (앰코테크놀로지코리아 기술연구소) ;
  • 주영창 (서울대학교 재료공학부) ;
  • 박영배 (안동대학교 신소재공학부)
  • Published : 2008.01.31
Download PDF
⟨ Previous Next ⟩

Abstract

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

Keywords

References

  1. International Technology Roadmap for Semiconductors 1999 Edition, 'Assembly & Packaging', http://www.itrs.net/Links/2000UpdateFinal/AssemblyPkg2000final.pdf, updated 14 January 2008
  2. M. S. Shin and Y. H. Kim, J. Electron. Mater., 32(12), 1448 (2003) https://doi.org/10.1007/s11664-003-0114-2
  3. T. K. Lee, S. Zhang, C. C. Wong, A. C. Tan and D.Hadikusuma, Thin Solid Films, 504, 441 (2006) https://doi.org/10.1016/j.tsf.2005.09.112
  4. P. G. Kim and K. N. Tu, Mater. Chem. Phys., 53(2), 165-171, (1998) https://doi.org/10.1016/S0254-0584(97)02076-2
  5. T. K. Lee, S. Zhang, C. C. Wong and A. C. Tan, Mater.Sci., Eng. A427, 136 (2006) https://doi.org/10.1016/j.msea.2006.04.041
  6. Y. Tian and C. Wang, Mater. Sci. Eng., B95, 254 (2002) https://doi.org/10.1016/S0921-5107(02)00270-2
  7. M. Schaefer R, A. Fournelle and J. Liang, J. Electron.Mater., 27, 1167, (1998) https://doi.org/10.1007/s11664-998-0066-7
  8. E. Imasato, M. Araki, I. Shimizu and Y. Ohno, in Proceedings of Znd Electron. Packag. Technol. conf., 338 (1998) https://doi.org/10.1109/EPTC.1998.756026
  9. K. N. Tu and R. D. Thompson, Acta metall., 30, 947-952, (1982) https://doi.org/10.1016/0001-6160(82)90201-2
  10. Y. C. Chan, A. lex C. K. So and J. K. L. Lai, Mater. Sci. Eng., B55, 5 (1998) https://doi.org/10.1016/S0921-5107(98)00202-5
  11. C. M. Tsai, W. C. Luo, C. W. Chang, Y. C. Shieh and C.R. Kao, J. Electron. Mater., 33(12), 1424 (2004) https://doi.org/10.1007/s11664-004-0082-1
  12. J. W. Yoon and S. B. Jung, J. Mater. Sci., 39, 4211, (2004) https://doi.org/10.1023/B:JMSC.0000033401.38785.73