Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Correlation between the Potential Barrier and Variation of Temperature on SiOC thin film

탄소 주입 실리콘 산화 절연박막에서 전위장벽과 온도 변화에 대한 상관성

  • Published : 2008.12.30
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Abstract

The SiOC films as the carbon doped silicon oxide film were prepared with the variation of flow rater ratios by plasma enhanced chemical vapor deposition. The samples were analyzed by the fourier transform infrared spectroscopy, I-V measurement and scanning electron microscopy. The samples were shown the chemical shift according to the flow rate ratios, and the grain did not formed at the sample with hybrid properties. The leakage currents decreased according to the increasing of the substrate temperature at the sample with hybrid properties, but the potential barrier increased.

탄소 주입실리콘 산화막으로서 SiOC 박막은 화학적 증착 방법에 의해 성막되었으며, 박막의 분석기법으로 FTIR 분석기와 I-V 측정과 표면분석으로 전자현미경을 이용하였다. 증착된 샘플들은 유량비의 변화에 따라서 화학적 이동현상이 나타났으며, 표면에서의 그레인은 유기물 특성과 무기물 특성의 SiOC 박막샘플에서 나타났다. 그러나 하이브리드 특성의 박막에서는 그레인이 형성되지 않았다. 하이브리드 특성의 박막샘플에서 온도가 증가할수록 누설전류는 감소하였다. 누설전류는 온도가 증가함에 따라 감소하였는데 전위장벽이 증가하기 때문에 감소하는 것으로 나타났다.

Keywords

References

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