한국재료학회지 (Korean Journal of Materials Research)

  • 제18권2호
  • /
  • Pages.84-91
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  • 2008
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
권호 표지
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Effect of Deposition and Annealing Temperature on Structural, Electrical and Optical Properties of Ag Doped ZnO Thin Films

  • Jeong, Eun-Kyung (School of Materials Science & Engineering, Yonsei University) ;
  • Kim, In-Soo (School of Materials Science & Engineering, Yonsei University) ;
  • Kim, Dae-Hyun (School of Materials Science & Engineering, Yonsei University) ;
  • Choi, Se-Young (School of Materials Science & Engineering, Yonsei University)
  • 발행 : 2008.02.25
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초록

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

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피인용 문헌

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