The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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28 nm MOSFET Design for Low Standby Power Applications

저전력 응용을 위한 28 nm 금속 게이트/high-k MOSFET 디자인

  • 임토우 (홍익대 대학원 전기정보제어공학과) ;
  • 장준용 (홍익대 대학원 전기정보제어공학과) ;
  • 김영민 (홍익대 공대 전자전기공학부)
  • Published : 2008.02.01
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Abstract

This paper explores 28 nm MOSFET design for LSTP(Low Standby Power) applications using TCAD(Technology Computer Aided Design) simulation. Simulated results show that the leakage current of the MOSFET is increasingly dominated by GIDL(Gate Induced Drain Leakage) instead of a subthreshold leakage as the Source/Drain extension doping increases. The GIDL current can be reduced by grading lateral abruptness of the drain at the expense of a higher Source/Drain series resistance. For 28 nm MOSFET suggested in ITRS, we have shown Source/Drain design becomes even more critical to meet both leakage current and performance requirement.

Keywords

References

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