Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Application of 532 nm YAG-Laser Annealing to Crystallization of Amorphous Si Thin Films Deposited on Glass Substrates

  • Lee, Jong-Won (Dept. of Materials Science and Engineering, Hongik Univeristy) ;
  • So, Byung-Soo (Dept. of Materials Science and Engineering, Hongik Univeristy) ;
  • Chung, Ha-Seung (Dept. of Mechanical and System Design Engineering, Hongik Univeristy) ;
  • Hwang, Jin-Ha (Dept. of Materials Science and Engineering, Hongik Univeristy)
  • Published : 2008.03.25
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Abstract

A 532 nm Nd-YAG laser was applied to crystallize amorphous Si thin films in order to evaluate the applicability of a Nd-YAG laser to low-temperature polycrystalline Si technology. The irradiation of a green laser was controlled during the crystallization of amorphous Si thin films deposited onto glass substrates in a sophisticated process. Raman spectroscopy and UV-Visible spectrophotometry were employed to quantify the degree of crystallization in the Si thin films in terms of its optical transmission and vibrational characteristics. The effectiveness of the Nd-YAG laser is suggested as a feasible alternative that is capable of crystallizing the amorphous Si thin films.

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References

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