Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Post-Annealing Conditions on Interfacial Adhesion Energy of Cu-Cu Bonding for 3-D IC Integration

3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향

  • Published : 2008.04.30
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Abstract

$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

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