JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Recent Development in Polymer Ferroelectric Field Effect Transistor Memory

  • Park, Youn-Jung (Department of Materials Science and Engineering, Yonsei University) ;
  • Jeong, Hee-June (Department of Materials Science and Engineering, Yonsei University) ;
  • Chang, Ji-Youn (Department of Materials Science and Engineering, Yonsei University) ;
  • Kang, Seok-Ju (Department of Materials Science and Engineering, Yonsei University) ;
  • Park, Cheol-Min (Department of Materials Science and Engineering, Yonsei University)
  • Published : 2008.03.30
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Abstract

The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.

Keywords

References

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