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Fabrication of Tip of Probe Card Using MEMS Technology

MEMS 기술을 이용한 프로브 카드의 탐침 제작

  • 이근우 (순천향대학교 전자정보공학과) ;
  • 김창교 (순천향대학교 전자정보공학과)
  • Published : 2008.04.01

Abstract

Tips of probe card were fabricated using MEMS technology. P-type silicon wafer with $SiO_2$ layer was used as a substrate for fabricating the probe card. Ni-Cr and Au used as seed layer for electroplating Ni were deposited on the silicon wafer. Line patterns for probing devices were formed on silicon wafer by electroplating Ni through mold which formed by MEMS technology. Bridge structure was formed by wet-etching the silicon substrate. AZ-1512 photoresist was used for protection layer of back side and DNB-H100PL-40 photoresist was used for patterning of the front side. The mold with the thickness of $60{\mu}m$ was also formed using THB-120N photoresist and probe tip with thickness of $50{\mu}m$ was fabricated by electroplating process.

References

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