The Transactions of the Korean Institute of Electrical Engineers P (전기학회논문지P)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

A Heating Apparatus for Semiconductor Manufacturing using Direct Heating Method

직접 가열 방식을 이용한 반도체 제조용 히팅 장치

  • 정순원 (ETRI 융합부품.소재연구부문) ;
  • 구경완 (호서대학교 국방과학기술학과)
  • Published : 2008.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

As to this research is new structure of the semiconductor substrate heating apparatus. The fast thermoresponsive according to the direct heating structure of the heating plate layer adhering closely to the floor side of a substrate and the fast heat loss minimization can be accomplished. Moreover, the contact area of the sheath heater, which is the heating plate layer built-in heating apparatus, is increased, so that it has more heating valid area. For this, it adheres closely to the substrate, in which the photosensitive film is coated and the heating plate layer, adhering closely to the floor side of a substrate the mica layer which adheres closely to the floor side of the upper heating plate layer in order to minimize an insulation and heat loss, and the lower part of the mica layer and it is comprised of the floor plate layer. The heating plate layer forms the continued groove portion over the floor side whole. The sheath heater for heating a substrate is inserted with the groove portion and the heating plate layer is comprised. It is confirmed that by using the new substrate heating structure, the temperature change of the heating plate against the time is observed. Then, there is the electric power saving effect of about 40% in comparison with the existing method.

Keywords

References

  1. B. J. Wrona, E. Johanson, "Development of direct electrical heating apparatus to study the response of nuclear fuels to applied transients", Nuclear Technology, Vol. 29, Issue 3, pp. 433-442, 1976 https://doi.org/10.13182/NT76-A31608
  2. T. Are, N Miyamoto, ''DEVELOPMENT OF NEW SUBSTRATE HEATING-APPARATUS FOR MOLECULAR BEAM EPITAXY", Tohoku Kogyo Daigaku kiyo. Series 1, Rikogaku-hen, Issue 8, pp. 185-188, 1998
  3. G. Hilimana, P. Infeltab, "A novel apparatus for the uniform heating of substrates during post expose bake", Proceedings of SPIE-The International Society for Optical Engineering, Vol. 5039 II, pp. 1319-1326, 2003
  4. K. J. Daun, J. R. Howell, and D. P. Morton, "Optimization of Transient Heater Settings to Provide Spatially Uniform Heating in Manufacturing Processes Involving Radiant Heating", Numerical Heat Transfer, Part A, Vol. 46, pp. 651 - 667, 2004 https://doi.org/10.1080/104077890504375
  5. M. Girtan, P. O. Logeraisa, L. Avrila, F. Gonzzattib, A. Boutevillea, "THERMAL PROFILE EVALUATION OF A SILICON WAFER IN THE APPARATUS FOR RAPID THERMAL CHEMICAL VAPOUR DEPOSITION", Journal of Optoelectronics and Advanced Materials, Vol. 7, No. 2, pp. 665-670, 2005
  6. S. Hirasawa, S. Ito, "Analytical study of thermal control method to minimize temperature change of a plate with changing heat generation", Proceedings of the ASME/JSME Thermal Engineering Summer Heat Transfer Conference - HT 2007, Vol. 3, pp. 169-173, 2007
  7. E. Rooy, "Isothermal melting process offers 70% energy savings", Light Metal Age, Vol. 65, pp. 46-51, 2007