Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Metal Organic Chemical Vapor Deposition Characteristics of Germanium Precursors

Metal Organic Chemical Vapor Deposition법을 이용한 Germanium 전구체의 증착 특성 연구

  • Kim, Sun-Hee (School of Materials Science & Engineering, Chonnam National University) ;
  • Kim, Bong-June (School of Materials Science & Engineering, Chonnam National University) ;
  • Kim, Do-Heyoung (School of Applied Chemical Engineering, Chonnam National University) ;
  • Lee, June-Key (School of Materials Science & Engineering, Chonnam National University)
  • 김선희 (전남대학교 신소재공학부) ;
  • 김봉준 (전남대학교 신소재공학부) ;
  • 김도형 (전남대학교 응용화학공학부) ;
  • 이준기 (전남대학교 신소재공학부)
  • Published : 2008.06.30
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Abstract

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

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References

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