Characterization of transparent ATO conducting films prepared by RF magnetron sputtering

RF 마그네트론 스퍼터링 법에 의한 ATO 투명전도막의 특성

  • Lee, Sung-Uk (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Yong-Seob (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Hong, Byung-You (School of Information and Communication Engineering, Sungkyunkwan University)
  • 이성욱 (성균관대학교 정보통신공학부) ;
  • 박용섭 (성균관대학교 정보통신공학부) ;
  • 홍병유 (성균관대학교 정보통신공학부)
  • Published : 2008.04.30

Abstract

In this study, we synthesized ATO films using RF magnetron sputtering method consisted of $SnO_2$ target added Sb of 6 wt% and investigated the effect of $O_2$ on structural, electrical, and optical properties of ATO films. As a result, in case of $O_2$/Ar ratio of 0.11, we obtained ATO films exhibit the properties such as the resistivity about $8{\times}10^{-3}[{\Omega}-cm]$, the transmittance of 85.17%, and retile structure.

본 연구에서는 ATO 박막의 전도 특성향상을 위하여 RF 마그네트론 스퍼터링을 이용하여, 6 wt%의 Sb가 첨가된 $SnO_2$ 박막을 합성을 진행하였으며, 박막합성시 스퍼터링 가스인 아르곤(Ar)과 반응가스인 산소($O_2$)의 분압 비율의 증가에 따른 ATO 박막의 구조적, 전기적, 광학적 특성들의 고찰하였다. 결과적으로 산소/아르곤의 비율이 0.11에서 $8{\times}10^{-3}[{\Omega}{\cdot}cm]$의 비저항과 85.17%, 그리고 retile 구조의 이상적인 전도특성과 투과특성, 그리고 결정화를 이룬 ATO 박막 얻었다.

Keywords

References

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