Journal of Electrical Engineering and Technology

  • 제3권2호
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  • Pages.276-279
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  • 2008
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  • 1975-0102(pISSN)
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  • 2093-7423(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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Enhanced Cathode-Luminescence in a InxGa1-xN/InyGa1-y Green Light Emitting Diode Structure Using Two-Dimensional Photonic Crystals

  • Choi, Eui-Sub (Dept. of Electrical and Electronic Engineering, Ajou University) ;
  • Lee, Jae-Jin (Dept. of Electrical and Electronic Engineering, Ajou University)
  • 발행 : 2008.06.30
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초록

We report on the enhancement of cathode-luminescence in an $In_xGa_{1-x}N/In_yGa_{1-y}$ green light emitting diode structure using two-dimensional photonic crystals. The square lattice arrays of photonic crystals with diameter/periodicity of 200/500 nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 170, 95, and 65 nm, were constructed. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurement indicated that up to 30-fold enhancement of cathode-luminescence intensity has been achieved.

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참고문헌

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