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ZnO Nanowires and P3HT Polymer Composite TFT Device

ZnO 나노선과 P3HT 폴리머를 이용한 유/무기 복합체 TFT 소자

  • Moon, Kyeong-Ju (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Choi, Ji-Hyuk (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Kar, Jyoti Prakash (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University) ;
  • Myoung, Jae-Min (Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University)
  • 문경주 (연세대학교 신소재공학부) ;
  • 최지혁 (연세대학교 신소재공학부) ;
  • ;
  • 명재민 (연세대학교 신소재공학부)
  • Published : 2009.01.31

Abstract

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.

Keywords

References

  1. A. Dodabalapur, L. Torsi and H. E. Katz, Science, 268, 270 (1995) https://doi.org/10.1126/science.268.5208.270
  2. C. D. Dimitrakopouls, A.R. Brown and A. Pomp, J. Appl. Phys., 80, 2501 (1996) https://doi.org/10.1063/1.363032
  3. C. R. Kagan, D. B. Mitzi and C. D. Dimitrakopoulos, Science 286, 945 (1999) https://doi.org/10.1126/science.286.5441.945
  4. X. Z. Bo, C. Y. Lee, M. S. Strano, M. Goldfinger, C. Nuckolls and Graciela B. Blanchet, Appl. Phys. Lett. 86, 182102 (2005) https://doi.org/10.1063/1.1906316
  5. J. F. Chang, B. Sun, D. W. Breiby, M. M. Nielsen, T. I. Solling, M. Giles, I. McCulloch, H. Sirringhaus, Chem. Mater., 16, 4772 (2004) https://doi.org/10.1021/cm049617w
  6. J. H. Park, S. W. Lee, H. H. Lee, Organic Electronics, 7, 256 (2006) https://doi.org/10.1016/j.orgel.2006.03.008
  7. J. P. Kar, M. H. Ham, S. W. Lee and J. M. Myoung, Appl. Surf. Sci., 255, 4087 (2009) https://doi.org/10.1016/j.apsusc.2008.10.081
  8. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, P. Yang, Adv. Mater, 13, 113 (2001) https://doi.org/10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H