Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of Annealing on a-Si:H Thin Films Fabricated by RF Magnetron Sputtering

RF 스퍼터를 이용하여 제작된 a-Si:H 박막의 어닐링 효과에 관한 연구

  • Kim, Do-Yun (School of New Materials Science and Engineering, Yonsei University) ;
  • Kim, In-Soo (School of New Materials Science and Engineering, Yonsei University) ;
  • Choi, Se-Young (School of New Materials Science and Engineering, Yonsei University)
  • 김도윤 (연세대학교 신소재공학과) ;
  • 김인수 (연세대학교 신소재공학과) ;
  • 최세영 (연세대학교 신소재공학과)
  • Published : 2009.02.27
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Abstract

The effect of annealing under argon atmosphere on hydrogenated amorphous silicon (a-Si:H) thin films deposited at room temperature and $300^{\circ}C$ using Radio Frequency (RF) magnetron sputtering has been investigated. For the films deposited at room temperature, there was not any increase in hydrogen content and optical band gap of the films, and as a result, quality of the films was not improved under any annealing conditions. For the films deposited at $300^{\circ}C$, on the other hand, significant increases in hydrogen content and optical band gap were observed, whereas values of microstructure parameter and dark conductivity were decreased upon annealing below $300^{\circ}C$. In this study, it was proposed that the Si-HX bonding strength is closely related to deposition temperature. Also, the improvement in optical, electrical and structural properties of the films deposited at $300^{\circ}C$ was originated from thermally activated hydrogen bubbles, which were initially trapped at microvoids in the films.

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References

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