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Optimization of Glass Wafer Dicing Process using Sand Blast

Sand Blast를 이용한 Glass Wafer 절단 가공 최적화

  • Seo, Won (Department of Electronic Engineering, Kangnam University) ;
  • Koo, Young-Mo (ESIP Lab., EPworks Co., Ltd.) ;
  • Ko, Jae-Woong (Korea Institute of Materials Science) ;
  • Kim, Gu-Sung (Department of Electronic Engineering, Kangnam University)
  • 서원 (강남대학교 전자시스템정보공학과) ;
  • 구영보 ((주)이피웍스 ESIP연구소) ;
  • 고재용 (재료연구소) ;
  • 김구성 (강남대학교 전자시스템정보공학과)
  • Published : 2009.01.31

Abstract

A Sand blasting technology has been used to address via and trench processing of glass wafer of optic semiconductor packaging. Manufactured sand blast that is controlled by blast nozzle and servomotor so that 8" wafer processing may be available. 10mm sq test device manufactured by Dry Film Resist (DFR) pattern process on 8" glass wafer of $500{\mu}m's$ thickness. Based on particle pressure and the wafer transfer speed, etch rate, mask erosion, and vertical trench slope have been analyzed. Perfect 500 um tooling has been performed at 0.3 MPa pressure and 100 rpm wafer speed. It is particle pressure that influence in processing depth and the transfer speed did not influence.

Keywords

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  1. Review of Technology Trends for Ceramics Removal-Machining vol.30, pp.12, 2013, https://doi.org/10.7736/KSPE.2013.30.12.1227