Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth of semi-polar (1-101) InGaN/GaN MQW structures on $8^{\circ}$ off -axis (100) patterned Si substrate by MOVPE

$8^{\circ}$-off (100) Si 기판위의 반극성을 가지는 (1-101) InGaN/GaN 다중양자우물 구조의 MOVPE 성장

  • Han, Y.H. (Department of Applied Science, Korea Maritime University) ;
  • Jean, H.S. (Department of Applied Science, Korea Maritime University) ;
  • Hong, S.H. (Department of Applied Science, Korea Maritime University) ;
  • Kim, E.J. (Department of Applied Science, Korea Maritime University) ;
  • Lee, A.R. (Department of Applied Science, Korea Maritime University) ;
  • Kim, K.H. (Department of Applied Science, Korea Maritime University) ;
  • Ahn, H.S. (Department of Applied Science, Korea Maritime University) ;
  • Yang, M. (Department of Applied Science, Korea Maritime University) ;
  • Tanikawa, T. (Department of Electronics, Nagoya University) ;
  • Honda, Y. (Department of Electronics, Nagoya University) ;
  • Yamaguchi, M. (Department of Electronics, Nagoya University) ;
  • Sawaki, N. (Department of Electronics, Nagoya University)
  • 한영훈 (한국해양대학교 반도체 물리) ;
  • 전헌수 (한국해양대학교 반도체 물리) ;
  • 홍상현 (한국해양대학교 반도체 물리) ;
  • 김은주 (한국해양대학교 반도체 물리) ;
  • 이아름 (한국해양대학교 반도체 물리) ;
  • 김경화 (한국해양대학교 반도체 물리) ;
  • 안형수 (한국해양대학교 반도체 물리) ;
  • 양민 (한국해양대학교 반도체 물리) ;
  • ;
  • ;
  • ;
  • Published : 2009.02.28
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Abstract

In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on $NH_3$ flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of $NH_3$ flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.

본 연구에서는 metal organic vapor phase epitaxy(MOVPF) 방법으로 $8^{\circ}$-off (100) Si 기판 위에 분극이 완화된(1-101) GaN를 성장한 후 광소자로서의 가능성을 확인하고자 (1-101) GaN 위에 InGaN/GaN MQW 구조를 제작하였으며 암모니아 유량, TMI 유랑 그리고 성장 온도 등 다양한 성장 조건에 따른 구조적, 광학적인 특성을 scanning electron microscopy(SEM)와 cathodoluminescence(CL)을 통하여 관찰하였다. (1-101) GaN 성장시 암모니아 유량이 적을수록 관통전위가 현저히 줄어드는 것을 확인하였다. (1-101) GaN stripe 위에 성장 시킨 InGaN/GaN MQW 구조를 이용하여 성장조건에 따라서 391.5nm부터 541.2nm에 이르는 넓은 영역의 범위에서 발광 스펙트럼을 조절할 수 있음을 확인하였다.

Keywords

References

  1. H. Zhang, Z. Ye and B. Zhao, "Investigation of preparation and properties of epitaxial growth GaN film on Si(111) substrate", J. Crystal Growth 210 (2000) 511 https://doi.org/10.1016/S0022-0248(99)00518-7
  2. Y. Kumagai, H. Murakami, S. Matsuki, A. Koukitu, K. Takemoto and H. Seki, "Growth of thick hexagonal GaN layer on GaAs (111)A surfaces for freestanding GaN by metalorganic hydrogen chloride vapor phase epitaxy", Jpn. J. Appl. Phys. 39 (2000) L703 https://doi.org/10.1143/JJAP.39.L703
  3. R. Langer, J. Simon, V. Ortiz, N.T. Pelekanos, A. Barski, R. Andre and M. Godlewski, "Giant electric fields in unstrained GaN single quantum wells", Appl. Phys. Lett. 74 (1999) 3827 https://doi.org/10.1063/1.124193
  4. M.D. Craven, P. Waltereit, J.S. Speck and S.P. Den-Baars, "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells", Appl. Phys. Lett. 84 (2004) 496 https://doi.org/10.1063/1.1638884
  5. T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, T. Matsuo, S. Chichibu and S. Nakamura, “Quantum-confined stark effect in an AlGaN/GaN/AlGaN single quantum well structure”, Jpn. J. Appl. Phys. Part 2-Lett. 38(8B) (1999) L914 https://doi.org/10.1143/JJAP.38.L914
  6. X. Ni, Y. Fu, Y.T. Moon, N. Biyikli and H. Morkoc, "Optimization of (11-20) a-plane GaN growth by MOCVD on (1-120) r-plane sapphire", J. Crystal Growth 290 (2006) 166 https://doi.org/10.1016/j.jcrysgro.2006.01.008
  7. B.A. Haskell, F. Wu, S. Matsuda, M.D. Craven, P.T. Fini, S.P. DenBaars, J.S. Speck and S. Nakamura, "Structural and morphological characteristics of planar (11-20) a-plane gallium nitride grown by hydride vapor phase epitaxy", Appl. Phys. Lett. 83 (2003) 1554 https://doi.org/10.1063/1.1604174
  8. B.A. Haskell, F. Wu, H. Sasano, P.T. Fini, S.P. Den-Baars, J.S. Speck and S. Nakamura, Presented at the IWN 2004, July 19-23, Pittsburgh PE (2004)
  9. T. Paskova, P.P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kisic, B. Arnaudov, S. Tungasmita and B. Monemar, "Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices", Phys. Stat. Sol. (a) 201 (2004) 381 https://doi.org/10.1002/pssa.200304001
  10. T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P.O. A. Persson, P.P. Paskov, S. Evtimova, M. Abrashev and B. Monemar, "Defect and stress relaxation in HVPEGaN films using high temperature reactively sputtered AlN buffer", J. Crystal Growth 230 (2001) 381 https://doi.org/10.1016/S0022-0248(01)01264-7
  11. T. Paskova, B. Monemar, M.O. Manasreh, I.T. Ferguson (Eds.), III-Nitride Semiconductor Growth, Taylorand Francis Books, New York (2003) 175
  12. H. Zhang, Z. Ye and B. Zhao, "An investigation of structural, optical and electrical properties of GaN thin films grown on Si(111) by reaction evaporation", Solid State Electronics 46 (2002) 301 https://doi.org/10.1016/S0038-1101(01)00206-4
  13. N. Takahashi, S. Matsuki, A. Koukitu and H. Seki, "Growth of GaN on GaAs(111)B by metalorganic hydrogen chloride VPE using double buffer layer", Jpn. J. Appl. Phys. 36 (1997) L1133 https://doi.org/10.1143/JJAP.36.L1133
  14. X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars and J.S. Speck, “Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells" Appl. Phys. Lett. 72 (1998) 692 https://doi.org/10.1063/1.120844
  15. A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck and U.K. Mishra, "Properties of nonpolar a-plane a-plane GaN", Appl. Phys. Lett. 86 (2005) 031901 https://doi.org/10.1063/1.1895479
  16. S.N. Lee H.S. Paek, H. Kim, Y.M. Park, T. Jang and Y. Park, "Characterization of a-plane InGaN multiplequantum wells grown on maskless lateral epitaxially overgrown a-plane GaN", Appl. Phys. Lett. 92 (2008) 111106 https://doi.org/10.1063/1.2888745