Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate

HVPE 방법에 의해 r-plane 사파이어 기판 위의 선택 성장된 GaN/AlGaN 이종 접합구조의 특성

  • Hong, S.H. (Department of Applied Science, Korea Maritime University) ;
  • Jeon, H.S. (Department of Applied Science, Korea Maritime University) ;
  • Han, Y.H. (Department of Applied Science, Korea Maritime University) ;
  • Kim, E.J. (Department of Applied Science, Korea Maritime University) ;
  • Lee, A.R. (Department of Applied Science, Korea Maritime University) ;
  • Kim, K.H. (Department of Applied Science, Korea Maritime University) ;
  • Hwang, S.L. (Department of Applied Science, Korea Maritime University) ;
  • Ha, H. (Department of Applied Science, Korea Maritime University) ;
  • Ahn, H.S. (Department of Applied Science, Korea Maritime University) ;
  • Yang, M. (Department of Applied Science, Korea Maritime University)
  • 홍상현 (한국해양대학교 응용과학과 반도체물리) ;
  • 전헌수 (한국해양대학교 응용과학과 반도체물리) ;
  • 한영훈 (한국해양대학교 응용과학과 반도체물리) ;
  • 김은주 (한국해양대학교 응용과학과 반도체물리) ;
  • 이아름 (한국해양대학교 응용과학과 반도체물리) ;
  • 김경화 (한국해양대학교 응용과학과 반도체물리) ;
  • 황선령 (한국해양대학교 응용과학과 반도체물리) ;
  • 하홍주 (한국해양대학교 응용과학과 반도체물리) ;
  • 안형수 (한국해양대학교 응용과학과 반도체물리) ;
  • 양민 (한국해양대학교 응용과학과 반도체물리)
  • Published : 2009.02.28
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Abstract

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

본 논문에서는 혼합소스(mixed-source) HVPE(hydride vapor phase epitaxy)방법으로 선택성장(SAC: selective area growth) GaN/AlGaN 이종접합구조의 발광다이오드를 r-plane 사파이어 기판 위에 제작하였다. SAG-GaN/AlGaN DH(double heterostructure)는 고온 GaN 버퍼층, Te 도핑된 AlGaN n-클래딩층. Gan 활성층. Mg 도핑된 AlGaN p-클래딩층. Mg 도핑된 GaN p-캡층으로 구성되어있다. GaN/AlGaN 이종접합구조의 발광다이오드의 특성을 알아보기 위해 SEM을 통한 구조적 분석과 전류-전압 측정(I-V: current-voltage measurement), 전류-광출력(EL: electroluminescence) 측정을 통하여 전기적, 광학적 특성을 평가하였다.

Keywords

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