JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Investigation of Frequency Dependent Sensitivity of Noise Figure on Device Parameters in 65 nm CMOS

  • Koo, Min-Suk (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Jung, Hak-Chul (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Jhon, Hee-Sauk (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul National University)
  • Published : 2009.03.31
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Abstract

We have investigated the noise sensitivity of low noise amplifier (LNA) at different frequency. This noise sensitivity analysis provides insights about noise parameters and it is very beneficial for making appropriate design trade-offs. From this work, the circuit designer can choose the adequate noise parameters tolerances.

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References

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