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Development of Ultra-high Capacitance MLCC through Low Temperature Sintering

저온소결을 통한 초고용량 MLCC 개발

  • Sohn, Sung-Bum (Material Development Group, LCR Division, Samsung Electro-Mechanics) ;
  • Kim, Hyo-Sub (Material Development Group, LCR Division, Samsung Electro-Mechanics) ;
  • Song, Soon-Mo (Material Development Group, LCR Division, Samsung Electro-Mechanics) ;
  • Kim, Young-Tae (Material Development Group, LCR Division, Samsung Electro-Mechanics) ;
  • Hur, Kang-Heon (LCR Development Team, LCR Division, Samsung Electro-Mechanics)
  • 손성범 (삼성전기 LCR 사업부 재료개발그룹) ;
  • 김효섭 (삼성전기 LCR 사업부 재료개발그룹) ;
  • 송순모 (삼성전기 LCR 사업부 재료개발그룹) ;
  • 김영태 (삼성전기 LCR 사업부 재료개발그룹) ;
  • 허강헌 (삼성전기 LCR 사업부 LCR개발팀)
  • Published : 2009.03.31

Abstract

It is necessary to minimize the thickness of Ni inner electrode layer and to improve the coverage of inner electrode, for the purpose of developing the ultra high-capacity multi layered ceramic capacitor (MLCC). Thus, low temperature sintering of dielectric $BaTiO_3$ ceramic should be precedently investigated. In this work, the relationship between dielectric properties of MLCC and batch condition such as mixing and milling methods was investigated in the $BaTiO_3$(BT)-Dy-Mg-Ba system with borosilicate glass as a sintering agent. In addition, several chip properties of MLCC manufactured by low temperature sintering were compared with conventionally manufactured MLCC. It was found that low temperature sintered MLCC showed better DC-bias property and lower aging rate. It was also confirmed that the thickness of Ni inner electrode layer became thinner and the coverage of inner electrode was improved through low temperature sintering.

Keywords

References

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