The Saw Damage Etching Characteristics of Silicon Wafer for Solar Cell with Alkaline Solutions

염기용액을 이용한 태양전지용 실리콘 기판의 절삭손상층 식각 특성

  • 권순우 (서울대학교 공과대학 화학생물공학부, 대한제당주식회사 중앙연구소) ;
  • 이종협 (서울대학교 공과대학 화학생물공학부) ;
  • 윤세왕 (대한제당(주)) ;
  • 김동환 (고려대학교 신소재공학부)
  • Published : 2009.03.25

Abstract

The surface etching characteristics of single crystalline silicon wafer were investigated using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). The saw damage layer was removed after 10min by KOH 45wt% solution at $80^{\circ}C$. The wafer etched at high temperature ($90^{\circ}C$) and in low concentration (4wt%) of TMAH solution showed an increased etch rate of silicon wafer and wavy patterns on the surface. Especially, pyramidal textures were formed in 4wt% TMAH solution without alcohol additives.

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