염기용액을 이용한 태양전지용 실리콘 기판의 절삭손상층 식각 특성

The Saw Damage Etching Characteristics of Silicon Wafer for Solar Cell with Alkaline Solutions

The surface etching characteristics of single crystalline silicon wafer were investigated using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). The saw damage layer was removed after 10min by KOH 45wt% solution at $80^{\circ}C$. The wafer etched at high temperature ($90^{\circ}C$) and in low concentration (4wt%) of TMAH solution showed an increased etch rate of silicon wafer and wavy patterns on the surface. Especially, pyramidal textures were formed in 4wt% TMAH solution without alcohol additives.