A Study on the Characteristics of Ti Films Deposited by a DC Magnetron Sputtering Assisted with RF Voltage

고주파 마그네트론 스퍼터장치로 증착한 Ti 박막의 특성에 관한 연구

  • Bae, Chang-Hwan (Dept. of Mechatronics Eng., Graduate School of M. T. &M., Hosea University) ;
  • Lee, Ju-Hee (Dept. of Mechatronics Eng., Graduate School of M. T. &M., Hosea University) ;
  • Han, Chang-Suk (Dept. of Defense Science & Technology, Hosea University)
  • 배창환 (호서대학교 혁신기술경영융합대학원 메카트로닉스공학과) ;
  • 이주희 (호서대학교 혁신기술경영융합대학원 메카트로닉스공학과) ;
  • 한창석 (호서대학교 국방과학기술학과)
  • Published : 2009.05.30

Abstract

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

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References

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