Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Design and Growth of InAs Multi-Quantum Dots and InGaAs Multi-Quantum Wells for Tandem Solar Cell

텐덤형 태양전지를 위한 InAs 다중 양자점과 InGaAs 다중 양자우물에 관한 연구

  • Cho, Joong-Seok (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
  • Kim, Sang-Hyo (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
  • HwangBoe, Sue-Jeong (Dyesol-timo, Research Institute of DSC) ;
  • Janng, Jae-Ho (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
  • Choi, Hyon-Kwang (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
  • Jeon, Min-Hyon (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
  • 조중석 (인제대학교 나노시스템공학과, 나노메뉴팩쳐링연구소) ;
  • 김상효 (인제대학교 나노시스템공학과, 나노메뉴팩쳐링연구소) ;
  • 황보수정 (Dyesol-timo DSC 연구소) ;
  • 장재호 (인제대학교 나노시스템공학과, 나노메뉴팩쳐링연구소) ;
  • 최현광 (인제대학교 나노시스템공학과, 나노메뉴팩쳐링연구소) ;
  • 전민현 (인제대학교 나노시스템공학과, 나노메뉴팩쳐링연구소)
  • Published : 2009.09.30
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Abstract

The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

본 연구에서는 1.1 eV의 에너지대역을 흡수할 수 있는 InAs 양자점구조와 1.3 eV의 에너지 대역을 흡수 할 수 있는 InGaAs 양자우물구조를 이용한 텐덤형 태양전지의 구조를 1D poisson을 이용해 설계하고, 분자선 에피택시 장비를 이용하여 각각 5, 10, 15층씩 쌓은 양자점 및 양자우물구조를 삽입하여 p-n접합을 성장하였다. Photoluminescence (PL) 측정을 이용한 광학적특성 평가에서 양자점 5층 및 양자우물 10층을 삽입한 구조의 PL 피크가 가장 높은 상대발광강도를 나타냈으며, 각각 1.1 eV 및 1.3 eV에서 57.6 meV 및 12.37 meV의 Full Width at Half Maximum을 나타내었다. 양자점의 밀도 및 크기는 Reflection High-Energy Electron Diffraction system과 Atomic Force Microscope를 이용해 분석하였다. 그리고 GaAs/AlGaAs층을 이용한 터널접합에서는 I-V 측정을 통하여 GaAs층의 두께(20, 30, 50 nm)에 따른 터널링 효과를 평가하였다. GaAs 층의 두께가 30 nm 및 50 nm의 터널접합에서는 backward diode 특성을 나타낸 반면, 20 nm GaAs층의 GaAs/AlGaAs 터널접합에서는 다이오드 특성 곡선을 확인하였다.

Keywords

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