ETRI Journal

  • 제31권6호
  • /
  • Pages.741-748
  • /
  • 2009
  • /
  • 1225-6463(pISSN)
  • /
  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지
DOI QR코드

DOI QR Code

Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines

  • Chang, Woo-Jin (Convergence Components & Material Research Laboratory, ETRI) ;
  • Lim, Jong-Won (Convergence Components & Material Research Laboratory, ETRI) ;
  • Ahn, Ho-Kyun (Convergence Components & Material Research Laboratory, ETRI) ;
  • Ji, Hong-Gu (Convergence Components & Material Research Laboratory, ETRI) ;
  • Kim, Hae-Choen (Convergence Components & Material Research Laboratory, ETRI)
  • 투고 : 2009.04.28
  • 심사 : 2009.07.15
  • 발행 : 2009.12.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

We present an analysis of microstrip coupled lines (MCLs) used to improve the stability of a 60 GHz narrowband amplifier. The circuit has a 4-stage structure implementing MCLs instead of metal-insulator-metal (MIM) capacitors for the unconditional stability of the amplifier and yield enhancement. The stability parameter, U, is used to compare the stability of MCLs with that of MIM capacitors. Experimental results show that MCLs are more stable than MIM capacitors with the same capacitances as MCLs because the parasitic parallel resistances of MCLs are lower than those of MIM capacitors. Moreover, the bandwidth of an amplifier using MCLs is narrower than one using MIM capacitors because the parasitic series inductances of MCLs are higher than those of MIM capacitors.

키워드

참고문헌

  1. S. Kim et al., "High-Gain Wideband CMOS Low Noise Amplifier with Two-Stage Cascode and Simplified Chebychev Filter," ETRI J., vol. 29, no. 5, Oct. 2007, pp. 670-672. https://doi.org/10.4218/etrij.07.0207.0025
  2. M. Karkkainen et al., "A Set of Integrated Circuits for 60 GHz Radio Front-End," IEEE MTT-S Digest, 2002, pp. 1273-1276.
  3. T. Yao et al., "Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio," IEEE J. Solid-State Circuits, vol. 42, no. 5, May 2007, pp. 1044-1057.
  4. Y. Mimino et al., "A 60 GHz Millimeter-Wave MMIC Chipset for Broadband Wireless Access System Front-End," IEEE MTTS Digest, 2002, pp. 1721-1724.
  5. H. Zirath et al., "Development of 60 GHz Front End Circuits for High Data Rate Communication System in Sweden and Europe," IEEE GaAs Digest, 2003, pp. 93-96.
  6. H. Zirath et al., "Development of 60-GHz Front-End Circuits for High-Data-Rate Communication System," IEEE J. Solid-State Circuits, vol. 39, no. 104, Oct. 2004, pp. 1640-1649. https://doi.org/10.1109/JSSC.2004.833568
  7. M. Varonen et al., "Power Amplifier for 60 GHz WPAN Applications," Radio and Wireless Conf. Digest, Aug. 2002, pp. 11-14.
  8. K.C. Gupta et al., Microstrip Lines and Slotlines, 2nd Ed., Artech House, 1996.
  9. J.P. Mondal, "An Experimental Verification of a Simple Distributed Model of MIM Capacitors for MMIC Applications," IEEE Trans. MTT, vol. 35, no. 4, Apr. 1987, pp. 403-408. https://doi.org/10.1109/TMTT.1987.1133662
  10. M.L. Edwards et al., "A New Criterion for Linear 2-Port Stability Using a Single Geometrically Derived Parameter," IEEE Trans. MTT, vol. 43, no. 12, Dec. 1992, pp. 2303-2311.
  11. D.M. Pozar, Microwave Engineering, 2nd Ed., John Wiley & Sons, 1981.
  12. J.W. Lim et al., "0.12 um Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon-Nitride-Assisted Process," Jpn. J. Appl. Physics, vol. 43, no. 12, Dec. 2004, pp. 7934-7938. https://doi.org/10.1143/JJAP.43.7934
  13. W. Chang et al., "A 60 GHz Medium Power Amplifier for Radioover-Fiber System," ETRI J., vol. 29, no. 5, Oct. 2007, pp. 673-675. https://doi.org/10.4218/etrij.07.0207.0075
  14. Y. Lee et al., "Highly Linear and Efficient Microwave GaN HEMT Doherty Amplifier for WCDMA," ETRI J., vol. 30, no. 1, Feb. 2008, pp. 158-160. https://doi.org/10.4218/etrij.08.0207.0181
  15. Mikko Varonen et al., "Integrated Power Amplifier for 60 GHz Wireless Applications," IEEE MTT-S Digest, 2003, pp. 915-918.
  16. S.E. Gunnarsson et al., "Highly Integrated 60 GHz Transmitter and Receiver MMICs in a GaAs pHEMT Technology," IEEE J. Solid-State Circuits, vol. 40, no. 11, Nov. 2005, pp. 2174-2186. https://doi.org/10.1109/JSSC.2005.857366

피인용 문헌

  1. E-Band Wideband MMIC Receiver Using 0.1 ${\mu}m$ GaAs pHEMT Process vol.34, pp.4, 2009, https://doi.org/10.4218/etrij.12.0111.0644
  2. Analysis of the degradation of AlGaN/GaN HEMTs by high-temperature operation tests vol.64, pp.10, 2009, https://doi.org/10.3938/jkps.64.1446