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Purification of Metallurgical Grade Silicon by Plasma Torch and E-beam Treatment

플라즈마 토치와 전자빔을 이용한 금속급 실리콘 정제

  • 음정현 (한국세라믹기술원 이천분원) ;
  • 남산 (고려대학교 신소재공학과) ;
  • 황광택 (한국세라믹기술원 이천분원) ;
  • 김경자 (한국세라믹기술원 이천분원) ;
  • 최균 (한국세라믹기술원 이천분원)
  • Received : 2010.05.10
  • Accepted : 2010.10.07
  • Published : 2010.11.30

Abstract

Cost-effective purification methods of silicon were carried out in order to replace the conventional Siemens method for solar grade silicon. Firstly, acid leaching which is a hydrometallurgical process was preceded with grinded silicon powders of metallurgical grade (~99% purity) to remove metallic impurities. Then, plasma treatments were performed with the leached silicon powders of 99.94% purity by argon plasma at 30 kW power under atmospheric pressure. Plasma treatment was specifically efficient for removing Zr, Y, and P but not for Al and B. Another purification step by EB treatment was also studied for the 99.92% silicon lump which resulted in the fast removal of boron and aluminum. That means the two methods are effective alternative tools for removing the doping elements like boron and phosphor.

Keywords

References

  1. S. Pizzini, M. Acciarri, and S. Binetti, “From Electronic Grade to Solar Grade Silicon : Change and Challenges in Photovoltaics,” Phys. Stat. Sol., 202 2928-42 (2005). https://doi.org/10.1002/pssa.200521104
  2. K. Peter, R. Kopecek, A. Soiland, and E. Enebakk, “Future Potential for SoG-Si Feedstock from Metallurgical Process Route,” In: Proceedings of the 23rd European Photovoltaic Solar Energy Conference, 1-5 Sep, Valencia, Spain, 2008.
  3. H. Y. Kim, “Preparation of Polysilicon for Solar Cells,” Kor. Chem. Eng. Res., 46 37-49 (2008).
  4. Y. Delannoy, C. Alemany, K.-I. Li, P. Proulx, and C. Trassy, “Plasma-refining Process to Provide Solar-grade Silicon,” Mater. Sol. Energy Mater. Sol. Cells, 72 69-75 (2002). https://doi.org/10.1016/S0927-0248(01)00151-9
  5. S. Martinuzzi, I. Periachaud, C. Trassy, and J. Degoulange, “n-Type Multicrystalline Silicon Wafers Prepared from Plasma Torch Refined Upgraded Metallurgical Feedstock”, Prog. Photovolt : Res. Appl., 17 297-305 (2009). https://doi.org/10.1002/pip.883
  6. E. Centurioni, D. Iencinella, C. Bronzoni, and F. Bonafe, “A Simplified Process and Equipment for Upgraded Metallurgical Silicon”, Proceedings of the 24th European Photovoltaic Solar Energy Conference, pp.21-25 Sep., Hamburg, Germany, 2009.
  7. J. H. Eum, H. S. Jang, H. T. Kim, and K. Choi, “Silicon Purification Through Acid Leaching and Unidirectional Solidification,” J. Kor. Crystal Growth Cryst. Technol., 6 232-36 (2009).
  8. C. P. Khattak, D. B. Joyce, and F. Schmid, “A Simple Process to Remove Boron from Metallurgical Grade Silicon,” Sol. Energy Mater. Sol. Cells, 74 77-89 (2002). https://doi.org/10.1016/S0927-0248(02)00051-X
  9. J.C.S. Pires, J. Otubo, A.F.B. Braga, and P.R. Mei, “The Purification of Metallurgical Grade Silicon by Electron Beam Melting”, J. Mater. Proc. Tech., 169 16-20 (2005). https://doi.org/10.1016/j.jmatprotec.2004.03.035

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  1. Directional Solidification Behaviors of Polycrystalline Silicon by Electron-Beam Melting vol.52, pp.10S, 2013, https://doi.org/10.7567/JJAP.52.10MB09
  2. Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power vol.53, pp.8S3, 2014, https://doi.org/10.7567/JJAP.53.08NJ05