Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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Near-field Optical Lithography for High-aspect-ratio Patterning by Using Electric Field Enhanced Postexposure Baking

전기장이 적용된 노광후굽기 공정에 의한 고종횡비 근접장 광 리소그래피

  • Kim, Seok (School of Mechanical Engineering, Yonsei University) ;
  • Jang, Jin-Hee (School of Mechanical Engineering, Yonsei University) ;
  • Kim, Yong-Woo (School of Mechanical Engineering, Yonsei University) ;
  • Jung, Ho-Won (School of Mechanical Engineering, Yonsei University) ;
  • Hahn, Jae-Won (School of Mechanical Engineering, Yonsei University)
  • 김석 (연세대학교 기계공학과) ;
  • 장진희 (연세대학교 기계공학과) ;
  • 김용우 (연세대학교 기계공학과) ;
  • 정호원 (연세대학교 기계공학과) ;
  • 한재원 (연세대학교 기계공학과)
  • Received : 2010.09.14
  • Accepted : 2010.10.19
  • Published : 2010.12.25
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Abstract

In this paper, we propose an electric field enhanced postexposure baking (EFE-PEB) method to obtain deep and high aspect ratio pattern profile in near-field recording. To describe the photoacid distribution under an external electric field during the PEB, we derived the governing equations based on Fick's second law of diffusion. From the results of the numerical calculations, it is found that the vertical movement of photoacid increases while the lateral movement is stationary as electric field varies from 0 to $8.0{\times}10^6\;V/m$. Also, it is proven that the profile of near-field recording is improved by using the EFE-PEB method with increased depth, higher aspect ratio and larger sidewall angle.

본 논문에서는 근접장 패턴의 깊이와 종횡비(aspect ratio) 향상을 위해 전기장이 적용된 노광후굽기(electric field enhanced postexposure baking) 공정을 제안하였다. 전기장이 적용된 노광후굽기 공정 중 광산(photoacid) 분포를 기술하기 위하여 픽(Fick)의 확산 제 2법칙에 기반을 둔 지배방정식을 구성하였다. 수치해석(numerical calculation)을 통해 전기장의 세기가 0 에서 $8.0{\times}10^6\;V/m$ 로 증가함에 따라 광산의 수직적 이동거리가 늘어나는 것에 반해 수평적 이동거리는 거의 변화가 없음을 확인하였고, 이 때 근접장 패턴 형상을 얻었다. 이를 통해 근접장 패턴의 깊이, 종횡비, 패턴의 측벽 각(sidewall angle)이 향상됨을 알 수 있었다.

Keywords

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