JSTS:Journal of Semiconductor Technology and Science

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A Semi-analytical Model for Depletion-mode N-type Nanowire Field-effect Transistor (NWFET) with Top-gate Structure

  • Yu, Yun-Seop (Engineering and Electronic Technology Institute, Hankyong National University)
  • Received : 2010.03.23
  • Published : 2010.06.30
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Abstract

We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.

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