Abstract
The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.
NiFe/Cu/NiFe/IrMn 스핀밸브 박막소자에 대해 자화 용이축에 의존하는 형상 자기이방성을 조사하였다. Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) 다층박막을 증착할 때 350 Oe의 자기장으로 인가한 자화 용이축을 폭 방향 또는 길이 방향으로 설정하여 $1\;{\mu}m\;{\times}\;18\;{\mu}m$의 소자를 제작하였다. 2단자 방법으로 소자의 자기저항 곡선으로부터 자장감응도를 측정하고 자화 용이축에 따른 형상 자기이방성을 비교하였다. 측정한 소자 길이 방향의 센싱전류와 고정층의 자화 용이축이 소자 폭방향 각도가 GMR-SV 소자를 바이오센서로 활용하는데 중요한 요인임을 확인하였다.
