Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Design of 2500 V NPT IGBT

2500 V급 NPT-IGBT소자의 설계에 관한 연구

  • 강이구 (극동대학교 컴퓨터정보표준학부) ;
  • 안병섭 (극동대학교 컴퓨터정보표준학부) ;
  • 남태진 (극동대학교 컴퓨터정보표준학부)
  • Published : 2010.04.01
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Abstract

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

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References

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