Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Dielectric properties of A-site defect perovskite La1/3NbO3 single crystal

A-자리 결함 perovskite La1/3NbO3 단결정의 유전특성

  • Received : 2010.10.08
  • Accepted : 2010.10.29
  • Published : 2010.12.31
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Abstract

After the specimen of A-site defect perovskite $La_{1/3}NbO_3$ single crystal was manufactured, the dielectric properties were studied between the temperature range of 10 and 800 K. The dielectric anomaly appeared at 50 K and 650 K, and, at about 650 K, the thermal hysteresis of dielectric constant was shown. The ac-conductivity of bulk showed the lowest activation energy of 0.43 eV at 560~690 K. Based on the results, it is assumed that the dielectric anomaly at 50K and 650 K was due to the antiparallel shift of $Nb^{5+}$-ion and the rearrangement of $Nb^{3+}$-ion, respectively.

A-자리 경함 perovskite $La_{1/3}NbO_3$ 단결정 시편을 제작하여 10~800 K 온도범위에서 유전특성을 조사하였다. 50 K와 650 K 부근에서 유전이상이 나타났으며, 고온영역(약 650 K)에서 유전상수의 thermal hysterisis가 크게 나타났다. 교류전도도 측정으로부터 560~690 K에서 입내 활성화 에너지는 0.43 eV로 가장 낮게 나타났다. 이들의 결과로부터 50 K 부근의 dielectric anomaly는 $Nb^{5+}$-이온의 antiparallel 변위에 기인한 것이며, 650 K 부근의 dielectric anomaly는 $La^{3+}$-이온의 재배열에 기인한 것으로 추측된다.

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References

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