Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Behavior of Solid Phase Crystallization of Amorphous Silicon Films at High Temperatures according to Raman Spectroscopy

라만 분석을 통한 비정질 실리콘 박막의 고온 고상 결정화 거동

  • Hong, Won-Eui (Department of Materials Science and Engineering, Hongik University) ;
  • Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)
  • 홍원의 (홍익대학교 공과대학 신소재 공학과) ;
  • 노재상 (홍익대학교 공과대학 신소재 공학과)
  • Published : 2010.02.28
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Abstract

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

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References

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