Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Thermo-Mechanical Analysis of Though-silicon-via in 3D Packaging

Though-silicon-via를 사용한 3차원 적층 반도체 패키징에서의 열응력에 관한 연구

  • Hwang, Sung-Hwan (Department of Materials Science & Engineering, Seoul National University) ;
  • Kim, Byoung-Joon (Department of Materials Science & Engineering, Seoul National University) ;
  • Jung, Sung-Yup (Department of Materials Science & Engineering, Seoul National University) ;
  • Lee, Ho-Young (Department of Materials Science & Engineering, Seoul National University) ;
  • Joo, Young-Chang (Department of Materials Science & Engineering, Seoul National University)
  • Received : 2010.03.05
  • Accepted : 2010.03.25
  • Published : 2010.03.30
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Abstract

Finite-element analyses were conducted to investigate the thermal stress in 3-dimensional stacked wafers package containing through-silicon-via (TSV), which is being widely used for 3-Dimensional integration. With finite element method (FEM), thermal stress was analyzed with the variation of TSV diameter, bonding diameter, pitch and TSV height. It was revealed that the maximum von Mises stresses occurred at the edge of top interface between Cu TSV and Si and the Si to Si bonding site. As TSV diameter increased, the von Mises stress at the edge of TSV increased. As bonding diameter increased, the von Mises stress at Si to Si bonding site increased. As pitch increased, the von Mises stress at Si to Si bonding site increased. The TSV height did not affect the von Mises stress. Therefore, it is expected that smaller Cu TSV diameter and pitch will ensure mechanical reliability because of the smaller chance of plastic deformation and crack initiation.

Through-silicon-via (TSV)를 포함하고 있는 3차원 적층 반도체 패키지에서 구조적 변수에 따른 열응력의 변화를 살펴보기 위하여 유한요소해석을 수행하였다. 이를 통하여 TSV를 포함하고 있는 3차원 적층 반도체 패키지에서 웨이퍼 간 접합부의 지름, TSV 지름, TSV 높이, pitch 변화에 따른 열응력의 변화를 예측하였다. 최대 von Mises 응력은 TSV의 가장 위 부분과 Cu 접합부, Si, underfill 계면에서 나타났다. TSV 지름이 증가할 때, TSV의 가장 위 부분에서의 von Mises 응력은 증가하였다. Cu 접합부 지름이 증가할 때, Si과 Si 사이의 Cu 접합부가 Si, underfill과 만나는 부분에서 von Mises 응력이 증가하였다. Pitch가 증가할 때에도, Si과 Si 사이의 Cu 접합부가 Si, underfill과 만나는 부분에서 von Mises 응력이 증가하였다. 한편, TSV 높이는 von Mises 응력에 크게 영향을 미치지 못하였다. 따라서 TSV 지름이 작을수록, 그리고 pitch가 작을수록 기계적 신뢰성은 향상되는 것으로 판단된다.

Keywords

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