한국레이저가공학회지 (Laser Solutions)

한국레이저가공학회 (Korean Society of Laser Processing)
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Laser Induced Crystallizatioo of Amorphous Si Films on Glass Substrates

  • 김필규 (광주과학기술원 기전공학과) ;
  • 문승재 (한양대학교 기계공학과) ;
  • 정성호 (광주과학기술원 기전공학과)
  • Kim, P.K. (Department of Mechatronics, Gwangju Institute of Science & Technology) ;
  • Moon, S.J. (School of Mechanical Engineering, Hanyang University) ;
  • Jeong, S.H. (Department of Mechatronics, Gwangju Institute of Science & Technology)
  • 발행 : 2010.03.31
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초록

Crystallization of 100 nm thick amorphous silicon (a-Si) films on glass substrates was carried out by using a double laser irradiation method. Depending on a-Si deposition method or glass types, the quality of crystallized silicon film varies significantly. For a-Si films deposited with high concentration of impurities, large grains or high crystallinity can not be achieved. Crystallization with different a-Si deposition methods confirmed that for the polycrystallization of a-Si films on glass substrates, controlling the impurity density during substrate preparation is critical.

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