The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Properties of HfO2 Insulating Film Using the ALD Method for Nonvolatile Memory Application

비휘발성 메모리 응용을 위한 ALD법을 이용한 HfO2 절연막의 특성

  • 정순원 (ETRI 융합부품.소재연구부문) ;
  • 구경완 (호서대학교 국방과학기술학과)
  • Received : 2010.04.20
  • Accepted : 2010.07.16
  • Published : 2010.08.01
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Abstract

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $HfO_2$/p-Si structures. The $HfO_2$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. TEMAHf and $H_2O$ were used as the hafnium and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TEMAHf pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $HfO_2$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

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References

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