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The Effect of Tail State on the Electrical and the Optical Properties in Amorphous IGZO

비정질 InGaZnO4 박막의 전기적, 광학적 특성간의 상관관계 연구

  • Bae, Sung-Hwan (Department of Materials Science and Engineering, Seoul National University) ;
  • Yoo, Il-Hwan (Department of Materials Science and Engineering, Seoul National University) ;
  • Kang, Suk-Ill (Department of Physics, Chounbuk National University) ;
  • Park, Chan (Department of Materials Science and Engineering, Seoul National University)
  • 배성환 (서울대학교 재료공학부) ;
  • 유일환 (서울대학교 재료공학부) ;
  • 강석일 (전북대학교 물리학과) ;
  • 박찬 (서울대학교 재료공학부)
  • Received : 2010.03.30
  • Accepted : 2010.05.28
  • Published : 2010.07.31

Abstract

In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

Keywords

References

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