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고농도로 도핑된 Bismuth 기반 어븀첨가 광섬유 증폭기의 이론적 모델링 기법에 관한 연구

Theoretical Modeling of High Concentration Bismuth-based Erbium-doped Fiber Amplifier

  • 신재현 (서울시립대학교 전자전기컴퓨터공학부) ;
  • 정민완 (서울시립대학교 전자전기컴퓨터공학부) ;
  • 이주한 (서울시립대학교 전자전기컴퓨터공학부)
  • Shin, Jae-Hyun (School of Electrical and Computer Engineering, University of Seoul) ;
  • Jung, Min-Wan (School of Electrical and Computer Engineering, University of Seoul) ;
  • Lee, Ju-Han (School of Electrical and Computer Engineering, University of Seoul)
  • 투고 : 2010.05.19
  • 심사 : 2010.08.05
  • 발행 : 2010.08.25

초록

본 논문에서는 고농도로 도핑된 Bismuth 기반 어븀첨가 광섬유 증폭기의 이득 및 노이즈 특성을 정확히 예측하기 위하여 필요한 이론적 모델링 기법에 대한 연구를 수행 하였다. 고농도의 Erbium 이온이 첨가되었을 때 발생하는 Clustering 현상에 기인한 Inhomogeneous Broadening현상, Cooperative Upconversion 현상, Pump Excited State Absorption과 Signal Excited State Absorption 현상 등 모든 현상을 고려하여 6 레벨 증폭기 System Model을 제시하고 이를 전산모사하여 실험치와 비교함으로써 제시된 모델의 유효성을 검증하였다.

A complete modeling of erbium-doped Bismuth-oxide fibers with a high doping concentration is presented. A 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative upconversion, pump excited state absorption (ESA), and signal ESA, was adopted for the modeling. The accuracy of the modeling was verified by comparing the calculated gain and noise figure with experimentally obtained ones.

키워드

참고문헌

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