Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characterization and Fabrication of Tin Oxide Thin Film by RF Reactive Sputtering

RF Reactive Sputtering법에 의한 산화주석 박막의 제조 및 특성

  • Kim, Young-Rae (Microsystem Packaging Center, Seoul Technopark) ;
  • Kim, Sun-Phil (School of Mechanical Design and Automation Engineering, Seoul National University of Science and Technology) ;
  • Kim, Sung-Dong (School of Mechanical Design and Automation Engineering, Seoul National University of Science and Technology) ;
  • Kim, Sarah Eun-Kyung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)
  • 김영래 (서울테크노파크 MSP 기술지원센터) ;
  • 김선필 (서울과학기술대학교 기계설계자동화공학부) ;
  • 김성동 (서울과학기술대학교 기계설계자동화공학부) ;
  • 김은경 (서울과학기술대학교 NID융합기술대학원)
  • Received : 2010.09.09
  • Accepted : 2010.09.16
  • Published : 2010.09.27
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Abstract

Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

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References

  1. M. Batzill and U. Diebold, Progr. Surf. Sci., 79, 47 (2005). https://doi.org/10.1016/j.progsurf.2005.09.002
  2. B. G. Lewis and D.C. Paine, MRS Bulletin, 25, 22 (2000).
  3. J. Kim, B. Kim, S. Choi, J. Park and J. Park, Kor. J. Mater. Res., 20(4), 223 (2010). https://doi.org/10.3740/MRSK.2010.20.4.223
  4. V. Demarne and A. Grisel, Sensor. Actuator. Phys., 13, 301 (1988). https://doi.org/10.1016/0250-6874(88)80043-X
  5. E. Leja, J. Korecki, K. Krop and K.Toll, Thin Solid Films, 59, 147 (1979). https://doi.org/10.1016/0040-6090(79)90288-8
  6. J. C. Lou, M. S. Lin, J. I. Chyi and J. H. Shieh, Thin Solid Films, 106, 163 (1983). https://doi.org/10.1016/0040-6090(83)90478-9
  7. A. F. Carroll and L. H. Slack, J. Electrochem. Soc., 123, 1889 (1976). https://doi.org/10.1149/1.2132718
  8. W. M. Sears and M. A. Gee, Thin Solid Films, 165, 265 (1988). https://doi.org/10.1016/0040-6090(88)90698-0
  9. D. Das and R. Banerjee, Thin Solid Films, 137, 321 (1987).
  10. J. Lee, Thin Solid Films, 516, 1386 (2008). https://doi.org/10.1016/j.tsf.2007.05.027
  11. A. Czapla, E. Kusior and M. Bucko, Thin Solid Films, 182, 15 (1989). https://doi.org/10.1016/0040-6090(89)90239-3
  12. S. Schiller, G. Beister and W. Sieber, Thin Solid Films, 111, 259 (1984). https://doi.org/10.1016/0040-6090(84)90147-0
  13. O. Stenzel, The Physics of Thin Film Optical Spectra: An Introduction, 1st ed., p.214, Springer, USA (2005).
  14. R. Sivaramasubramaniam, M. R. Muhamad and S. Radhakrishna, Phys. Status Solidi, 136, 215 (1993). https://doi.org/10.1002/pssa.2211360126
  15. A. K. Singh, A. Janotti, M. Scheffler and C. G. Van de Walle, Phys. Rev. Lett., 101, 055502 (2008). https://doi.org/10.1103/PhysRevLett.101.055502
  16. W. Guo, L. Fu, Y. Zhang, K. Zhang, L. Y. Liang, Z. M. Liu, H. T. Cao and X. Q. Pan, Appl. Phys. Lett., 96, 042113 (2010). https://doi.org/10.1063/1.3277153
  17. E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. K. Park, C. Hwang and R. Martins, Appl. Phys. Lett., 97, 052105 (2010). https://doi.org/10.1063/1.3469939