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Electrical Properties of Eco-Friendly RuO2-Based Thick-Film Resistors Containing CaO-ZnO-B2O3-Al2O3-SiO2 System Glass for AlN Substrate

Electrical Properties of Eco-Friendly RuO2-Based Thick-Film Resistors Containing CaO-ZnO-B2O3-Al2O3-SiO2 계 유리가 적용된 질화알루미늄 기판용 RuO2계 친환경 후막저항의 전기적 특성 연구

  • Kim, Min-Sik (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Hyeong-Jun (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Hyung-Tae (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Dong-Jin (KMC Technology) ;
  • Kim, Young-Do (Materials Science & Engineering, Hanyang University) ;
  • Ryu, Sung-Soo (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
  • 김민식 (한국세라믹기술원 엔지니어링세라믹센터) ;
  • 김형준 (한국세라믹기술원 엔지니어링세라믹센터) ;
  • 김형태 (한국세라믹기술원 엔지니어링세라믹센터) ;
  • 김동진 (케이엠씨테크놀러지) ;
  • 김영도 (한양대학교 신소재공학부) ;
  • 류성수 (한국세라믹기술원 엔지니어링세라믹센터)
  • Received : 2010.07.27
  • Accepted : 2010.08.17
  • Published : 2010.09.30

Abstract

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

Keywords

References

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