The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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Study on the Crystal Growth Behavior and Opto-Electrical Properties of Transparent Conducting Oxide Films with Au-Interlayer Fabricated by Using a Low-temperature Process

저온 박막 공정으로 제작된 Au 적층형 다층 투명전극의 결정성장 거동과 광-전기적 특성

  • 지영석 (선문대 공대 금속재료공학과) ;
  • 최용 (선문대 공대 전자재료공학과) ;
  • 이상헌 (선문대 공대 전자공학과)
  • Received : 2010.12.13
  • Accepted : 2010.12.27
  • Published : 2011.02.01
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Abstract

Transparent conducting oxide films like ITO/Au/ITO and AZO/Au/AZO were fabricated with a sputter at a low-temperature of less then $70^{\circ}C$ and their crystallization and opto-electrical properties were studied. X-ray diffractiometry showed that single-ITO layer was amorphous, whereas, ITO of ITO/Au/ITO multi-layer was crystal. The ITO crystallization and its orientation depended on Au crystallization. Surface roughness of the ITO-multi-layers were in the range of 29-88% of that of ITO-single layer. ITO on amorphous gold layer had more rough surface than ITO on crystal gold. The gold layer between ITO improved electrical conductivity. Carrier density, mobility, resistivity and sheet resistance of ITO-single layer were $2.3{\times}10^{19}/cm^3$, $85{\times}cm^2$/Vs, $31{\times}10^{-4}{\Omega}cm$, and $310{\times}{\Omega}/cm^2$, respectively. Those of ITO/Au/ITO-multi-layers depended on Au-interlayer-thickness, which were in the range of $3.6{\times}10^{19}{\sim}4.2{\times}10^{21}/cm^3$, $43{\sim}85cm^2$/Vs, $0.17{\times}10^{-4}{\sim}25{\times}10^{-4}{\Omega}cm$, and $1.7{\sim}20{\times}{\Omega}/cm^2$, respectively. The sheet resistances of the single-layer ITO and the multi-layer ITO were 310 and $2.7{\sim}21{\Omega}/cm^2$, respectively. That of AZO/Au/AZO was $8.6{\Omega}/cm^2$, which was better than the single-layer ITO.

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References

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