The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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A p-n Heterojunction Diode Constructed with A p-Si Nanowire and An n-ZnO Nanoparticle Thin-Film by Dielectrophoresis

Dielectrophoresis 방법으로 제작한 Si 나노선과 ZnO 나노입자 필름 기반 p-n 이종접합 다이오드

  • 김광은 (고려대학교 전기전자전파공학과) ;
  • 이명원 (고려대학교 전자전기공학과) ;
  • 윤정권 (고려대학교 전자전기공학과) ;
  • 김상식 (고려대학교 전기전자전파공학과)
  • Received : 2010.09.07
  • Accepted : 2010.11.25
  • Published : 2011.01.01
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Abstract

Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

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References

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